 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI7902EDN Preliminary Information Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET, Common Drain PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 8.3 8.0 6.7 rDS(on) (W) 0.028 @ VGS = 4.5 V 0.030 @ VGS = 3.7 V 0.043 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion/LiP Batteries D D PowerPAKt 1212-8 3.30 mm S1 1 2 3 G1 S2 3.30 mm 1.8 kW G2 4 1.8 kW G2 G1 D 8 7 6 5 D D D S1 N-Channel N-Channel S2 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 30 "12 8.3 Steady State Unit V 5.6 4.0 40 A 1.3 1.5 0.79 -55 to 150 W _C ID IDM IS PD TJ, Tstg 6.0 2.7 3.2 1.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Symbol Typical 30 65 1.9 Maximum 38 82 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. This data sheet contains preliminary specifications that are subject to change. Document Number: 71801 S-05696--Rev. A, 18-Feb-02 www.vishay.com 1 SI7902EDN Vishay Siliconix Preliminary Information MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 24 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.3 A Drain-Source On-State Resistancea rDS(on) VGS = 3.7 V, ID = 8.0 A VGS = 2.5 V, ID = 3.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 8.3 A IS = 2.7 A, VGS = 0 V 30 0.023 0.025 0.035 26 0.75 1.2 0.028 0.030 0.043 S V W 0.60 "1 "10 1 20 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 8.3 A 10 2.3 2.4 0.9 1.5 2.5 2.5 1.5 2.5 4.0 4.0 ms m 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 0.8 1000 Gate Current vs. Gate-Source Voltage 100 I GSS - Gate Current (mA) 0.6 I GSS - Gate Current (mA) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.01 0.4 0.2 0.0 0 3 6 9 12 15 0.001 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71801 S-05696--Rev. A, 18-Feb-02 www.vishay.com 2 SI7902EDN Preliminary Information TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) 2.5 V 18 I D - Drain Current (A) 24 30 Vishay Siliconix Transfer Characteristics 18 12 12 TC = 125_C 6 25_C -55_C 6 2V 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 V GS - Gate-to-Source Voltage (V) 5 VDS = 15 V ID = 8.3 A Gate Charge r DS(on) - On-Resistance ( W ) 4 0.06 3 0.04 VGS = 2.5 V VGS = 3.7 V 2 0.02 VGS = 4.5 V 1 0.00 0 6 12 18 24 30 0 0 2 4 6 8 10 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.8 VGS = 4.5 V ID = 8.3 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71801 S-05696--Rev. A, 18-Feb-02 www.vishay.com 3 SI7902EDN Vishay Siliconix Preliminary Information TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.08 ID = 3 A r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.06 10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C ID = 8.3 A 0.04 TJ = 25_C 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) Power (W) 40 50 Single Pulse Power, Juncion-To-Ambient -0.0 30 -0.2 20 -0.4 10 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71801 S-05696--Rev. A, 18-Feb-02 SI7902EDN Preliminary Information TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71801 S-05696--Rev. A, 18-Feb-02 www.vishay.com 5 |
Price & Availability of SI7902EDN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |